TRANSIENT-RESPONSE OF EPITAXIAL GAAS JFET STRUCTURES TO IONIZING-RADIATION

被引：6

作者：

GINELL, WS ^{[1
]}

ZULEEG, R ^{[1
]}

MCNICHOLS, JL ^{[1
]}

NOTTHOFF, JK ^{[1
]}

LEHOVEC, K ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS ASTRONAUT CO, HUNTINGTON BEACH, CA 92646 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期

关键词：

D O I：

10.1109/TNS.1973.4327389

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：171 / 179

页数：9

共 50 条

[1] TRANSIENT-RESPONSE OF GAAS ICS TO IONIZING-RADIATION
ZULEEG, R
NOTTHOFF, JK
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) : 4744 - 4749
[2] IONIZING-RADIATION RESPONSE OF MOS STRUCTURES
MCLEAN, FB
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C128 - C128
[3] IONIZING-RADIATION RESPONSE OF GAAS HETEROSTRUCTURE TECHNOLOGIES
LISTVAN, MA
VOLD, PJ
ARCH, DK
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2377 - 2377
[4] IONIZING-RADIATION RESPONSE OF GAAS JFETS AND DCFL CIRCUITS
ZULEEG, R
NOTTHOFF, JK
TROEGER, GL
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1656 - 1661
[5] REDUCTION IN TRANSIENT IONIZING-RADIATION RESPONSE IN GAAS-FETS USING AN ALGAAS BUFFER LAYER
ANDERSON, WT
TSENG, WF
CHRISTOU, A
DAVEY, JE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C219 - C219
[6] IONIZING-RADIATION HARDNESS OF GAAS TECHNOLOGIES
LISTVAN, MA
VOLD, PJ
ARCH, DK
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1664 - 1668
[7] TRANSIENT THERMAL AND MECHANICAL RESPONSE OF WATER SUBJECT TO IONIZING-RADIATION
APFEL, RE
SUN, YY
NATH, R
RADIATION RESEARCH, 1992, 131 (02) : 124 - 132
[8] JFET TRANSIENT RADIATION RESPONSE
LONG, DM
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 332 - &
[9] THE RESPONSE OF BRYOPHYTES TO IONIZING-RADIATION
WOOLLON, FBM
DAVIES, CR
ENVIRONMENTAL AND EXPERIMENTAL BOTANY, 1981, 21 (01) : 89 - 93
[10] TRANSIENT-RESPONSE MODEL FOR EPITAXIAL TRANSISTORS
LONG, DM
FLORIAN, JR
CASEY, RH
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4131 - 4134

← 1 2 3 4 5 →