CONTAMINATION OF SILICON OXIDE FILMS WITH NA ATOMS DUE TO THERMAL OXIDATION OF SILICON

被引：1

|

作者：

NAGASIMA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 08期

关键词：

D O I：

10.1143/JJAP.10.1119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1119 / &

相关论文

共 50 条

[31] ANODIC OXIDATION OF SILICON NITRIDE FILMS ON SILICON
TRIPP, TB
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (02) : 157 - &
[32] EFFECT OF OXIDATION AMBIENT ON THE DIELECTRIC-BREAKDOWN CHARACTERISTICS OF THERMAL OXIDE-FILMS OF SILICON
MURAKAMI, Y
SHIOTA, T
SHINGYOUJI, T
ABE, H
JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) : 5302 - 5305
[33] INFLUENCE OF THERMAL OXIDATION OF SILICON ON POSITION OF ABSORPTION BAND DUE TO OXYGEN ATOMS IN LAMBDA=0.1 MU REGION
BRUTSYN, KI
MATVEEV, VV
SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (12): : 2991 - +
[34] Structural and electrical characterisations of rapid thermal annealed thin silicon oxide films on silicon
Chan, YM
Choo, CK
Choi, WK
THIN SOLID FILMS, 1998, 317 (1-2) : 219 - 222
[35] MIGRATION OF GOLD ATOMS THROUGH THIN SILICON-OXIDE FILMS
MADAMS, CJ
MORGAN, DV
HOWES, MJ
JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 5088 - 5090
[36] MULTIPLE THERMAL-OXIDATION OF SILICON AND ELECTROPHYSICAL PROPERTIES OF SILICON-OXIDE FILMS AND SI-SIO2 BONDING LAYER
KROPMAN, D
LANGOVITS, P
VINNAL, M
MEYLER, B
THIN SOLID FILMS, 1976, 34 (01) : 91 - 93
[37] Thermal oxidation of free-standing porous silicon films
Salonen, J
Lehto, VP
Laine, E
APPLIED PHYSICS LETTERS, 1997, 70 (05) : 637 - 639
[38] LOCALIZED THERMAL OXIDATION OF SPUTTERED TANTALUM THIN FILMS ON SILICON
CROSET, M
VELASCO, G
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : C221 - &
[39] Rapid thermal oxidation of silicon in mixtures of oxygen and nitrous oxide
Grant, JM
Karim, Z
RAPID THERMAL AND INTEGRATED PROCESSING V, 1996, 429 : 257 - 262
[40] ENHANCED ELECTRON INJECTION IN THERMAL OXIDE-FILMS ON SILICON
OLCER, M
BUHLMANN, HJ
ILEGEMS, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C351 - C351

← 1 2 3 4 5 →