PULSED ELECTRON-BEAM ANNEALING OF SPUTTERED AMORPHOUS SI-H FILMS

被引：1
|
作者：
TARDY, J
BARBIER, D
CACHARD, A
LAUGIER, A
FONTENILLE, J
机构：
[1] INST NATL SCI APPL,PHYS MAT LAB,F-69100 VILLEURBANNE,FRANCE
[2] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE
来源：
MATERIALS RESEARCH BULLETIN | 1981年 / 16卷 / 03期
关键词：
D O I：
10.1016/0025-5408(81)90052-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：347 / 352
页数：6
相关论文
共 50 条
  • [31] HYDROGENATION OF ELECTRON-BEAM EVAPORATED AMORPHOUS SILICON FILMS
    FRITZSCHE, H
    TSAI, CC
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 399 - 399
  • [32] AMORPHOUS SiNx: H FILMS WITH A LOW DENSITY OF Si-H BONDS.
    Hasegawa, S.
    Matuura, M.
    Anbutu, H.
    Kurata, Y.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1987, 56 (05): : 633 - 640
  • [33] INTERMEDIATE AND SELF-SUSTAINING CRYSTALLIZATION OF A-SI LAYERS DURING PULSED ELECTRON-BEAM ANNEALING
    BALANDIN, VY
    DVURECHENSKII, AV
    ALEKSANDROV, LN
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02): : K105 - K109
  • [34] ELECTRICAL-CONDUCTIVITY IN AMORPHOUS SI-H AND SIC-H FILMS
    KOLODZIEJ, A
    PISARKIEWICZ, T
    ACTA PHYSICA POLONICA A, 1989, 75 (02) : 309 - 312
  • [35] STRUCTURAL, OPTICAL AND TRANSPORT PROPERTIES OF SPUTTERED HYDROGENATED AMORPHOUS SILICON FILMS IN RELATION TO Si-H BONDING CONFIGURATIONS.
    Dixmier, J.
    Derouet, P.
    Essamet, M.
    Laridjani, M.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1985, 52 (05): : 943 - 954
  • [36] THE INFLUENCE OF ALUMINUM UPON ELECTRONIC TRANSPORT IN RF-SPUTTERED AMORPHOUS SI-H
    FORTUNA, HS
    MARSHALL, JM
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (05): : 383 - 390
  • [37] ELECTRON-BEAM DOPING OF SI INTO GAAS - THE ANNEALING BEHAVIOR OF PHOTOLUMINESCENCE
    WADA, T
    TAKEDA, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 348 - 351
  • [38] MULTIPLY SCANNED ELECTRON-BEAM ANNEALING OF SI IMPLANTED GAAS
    BUJATTI, M
    CETRONIO, A
    NIPOTI, R
    OLZI, E
    APPLIED PHYSICS LETTERS, 1982, 40 (04) : 334 - 336
  • [39] OPTICAL-PROPERTIES OF SPUTTERED SI-H
    MARTIN, PM
    PAWLEWICZ, WT
    MANN, IB
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 324 : 184 - 190
  • [40] HYDROGEN-ASSOCIATED DISORDER MODES IN AMORPHOUS SI-H FILMS
    CARLOS, WE
    TAYLOR, PC
    PHYSICAL REVIEW LETTERS, 1980, 45 (05) : 358 - 362
12345