MULTIPLE EXCITONIC FEATURES IN LOW-CARBON CONTENT AL-CHI-GA1-CHI-AS

被引：0

作者：

OLSTHOORN, SM ^{[1
]}

DRIESSEN, FAJM ^{[1
]}

FRIGO, DM ^{[1
]}

GILING, LJ ^{[1
]}

机构：

[1] BILLITON RES BV,6800 AA ARNHEM,NETHERLANDS

来源：

GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence (PL) results are reported on AlxGa1-xAs containing very low carbon concentrations grown by metalorganic vapour-phase epitaxy. Multiple excitonic transitions are observed which cannot be attributed to variations in aluminum fractions. The localization energies of these multiple excitonic features, which are only observed in layers with aluminum fractions greater than 0.2, varies from 2 to 8 meV. This indicates that some of these transitions must be due to excitons bound to non-shallow centres, although their precise origin is still unknown.

引用

页码：779 / 782

页数：4

共 22 条

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INFRARED APPLICATIONS OF SEMICONDUCTORS II, 1998, 484 : 419 - 424
[22] Ultra-low-frequency self-oscillation of photocurrent in InxGa1-xAs/Al0.15Ga0.85As multiple-quantum-well p-i-n diodes
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