Ultra-low-frequency self-oscillation of photocurrent in InxGa1-xAs/Al0.15Ga0.85As multiple-quantum-well p-i-n diodes

We report an observation of ultra-low-frequency self-oscillation of photocurrent in InxGa1-xAs/Al0.15Ga0.85As multiple-quantum-well p-i-n diodes. The photocurrent intensity shows self-oscillations with a characteristic frequency of similar to0.1 Hz at low temperatures under reverse bias voltages. The photocurrent self-oscillation depends on applied bias voltage, temperature, illumination power, and indium content of quantum-well layers. These dependences indicate that the photocurrent self-oscillation is attributed to photogenerated carriers trapped in localized centers within InxGa1-xAs quantum-well regions. (C) 2004 American Institute of Physics.