THEORETICAL CALCULATIONS OF TEMPERATURE AND CURRENT PROFILES IN MULTI-FINGER HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：41
|
作者：
LIU, W
BAYRAKTAROGLU, B
机构：
[1] Central Research Laboratories, Texas Instruments, P.O. Box 655936, M/S 134, Dallas
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 02期
关键词：
D O I：
10.1016/0038-1101(93)90130-I
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A theoretical analysis is presented to determine both the temperature profile and current distribution among the fingers for a multi-finger heterojunction bipolar transistor designed for microwave power applications. This analysis allows for arbitrary transistor geometries and non-uniform emitter ballast resistors in the fingers. The effects of varying ballast resistances, emitter width, emitter length, and spacing between the fingers will be discussed.
引用
收藏
页码：125 / 132
页数：8
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