ANTIMONY CHEMISORPTION ONTO GAAS(110) STUDIED BY HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY

被引：4
|
作者：
MARIANI, C
ANNOVI, G
DELPENNINO, U
机构：
[1] Dipartimento di Fisica, Università di Modena, 1-41100 Modena
来源：
SURFACE SCIENCE | 1991年 / 251卷
关键词：
D O I：
10.1016/0039-6028(91)90985-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We present a study of the GaAs Fuchs-Kliewer phonon intensity and of the elastic peak width in a high resolution electron energy loss spectroscopy experiment on the Sb/GaAs(110) system grown at room temperature. An appropriate model calculation is performed, by assuming the growth of a semiconducting or metallic antimony overlayer on GaAs. Comparison with the experimental data shed light on the crystallization process of Sb via metallic island formation into a semiconducting matrix.
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页码：218 / 222
页数：5
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