ANTIMONY CHEMISORPTION ONTO GAAS(110) STUDIED BY HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY

被引:4
|
作者
MARIANI, C
ANNOVI, G
DELPENNINO, U
机构
[1] Dipartimento di Fisica, Università di Modena, 1-41100 Modena
关键词
D O I
10.1016/0039-6028(91)90985-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present a study of the GaAs Fuchs-Kliewer phonon intensity and of the elastic peak width in a high resolution electron energy loss spectroscopy experiment on the Sb/GaAs(110) system grown at room temperature. An appropriate model calculation is performed, by assuming the growth of a semiconducting or metallic antimony overlayer on GaAs. Comparison with the experimental data shed light on the crystallization process of Sb via metallic island formation into a semiconducting matrix.
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页码:218 / 222
页数:5
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