ANTIMONY CHEMISORPTION ONTO GAAS(110) STUDIED BY HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY

被引：4

作者：

MARIANI, C

ANNOVI, G

DELPENNINO, U

机构：

[1] Dipartimento di Fisica, Università di Modena, 1-41100 Modena

来源：

SURFACE SCIENCE | 1991年 / 251卷

关键词：

D O I：

10.1016/0039-6028(91)90985-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present a study of the GaAs Fuchs-Kliewer phonon intensity and of the elastic peak width in a high resolution electron energy loss spectroscopy experiment on the Sb/GaAs(110) system grown at room temperature. An appropriate model calculation is performed, by assuming the growth of a semiconducting or metallic antimony overlayer on GaAs. Comparison with the experimental data shed light on the crystallization process of Sb via metallic island formation into a semiconducting matrix.

引用

页码：218 / 222

页数：5

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