Free-carrier effects on the excitonic absorption of n-type modulation-doped Zn1-xCdxSe/ZnSe multiple quantum wells

被引：11

作者：

Calcagnile, L

Rinaldi, R

Prete, P

Stevens, CJ

Cingolani, R

Vanzetti, L

Sorba, L

Franciosi, A

机构：

[1] IST NAZL FIS MAT,LAB TECNOL AVANZATE SUPERFICE & CATALISI,I-34012 TRIESTE,ITALY

[2] UNIV OXFORD,CLARENDON LAB,OXFORD OX1 3PU,ENGLAND

[3] CNR,IST ICMAT,MONTELIBRETTI,ROMA,ITALY

[4] UNIV MINNESOTA,DEPT MAT SCI & CHEM ENGN,MINNEAPOLIS,MN 55455

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.52.17248

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the effect of the free-electron density on the heavy-hole exciton transitions in n-type, modulation-doped Zn1-xCdxSe/ZnSe multiple quantum wells. Exciton binding energy and oscillator strength were determined from optical-absorption spectra and were found to be strongly influenced by the free-carrier concentration. Complete saturation of the excitonic absorption could be induced at sufficiently high doping levels. Comparison with theoretical predictions suggests that phase-space filling and short-range exchange interactions may account for exciton bleaching. The corresponding critical density was found to increase with Cd content as a consequence of the increasing exciton stability.

引用

页码：17248 / 17253

页数：6

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