PHOTOLUMINESCENCE STUDY OF SILICON DONORS IN N-TYPE MODULATION-DOPED GAAS/ALAS QUANTUM-WELLS

被引：13
|
作者：
LEE, ST
PETROU, A
DUTTA, M
PAMULAPATI, J
NEWMAN, PG
FU, LP
机构：
[1] USA,RES LAB,FT MONMOUTH,NJ 07703
[2] EMORY UNIV,DEPT PHYS,ATLANTA,GA 30322
来源：
PHYSICAL REVIEW B | 1995年 / 51卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.51.1942
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied the photoluminescence spectra from GaAs/AlAs quantum wells doped with silicon donors in the AlAs barriers. The GaAs well width in these structures was chosen so that the lowest conduction subband e1 lies above the donor states. An impurity-related feature is identified as the donor-to-valence-band transition. A comparison of the energy of this feature with that of the AlAs X-valley-to-valence-band transition yields the donor binding energy. © 1995 The American Physical Society.
引用
收藏
页码：1942 / 1945
页数：4
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