Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells

被引：5
|
作者：
Yilmaz, M. [2 ]
Sun, Y. [1 ]
Balkan, N. [1 ]
Ulug, B. [2 ]
Ulug, A. [2 ]
Sopanen, M. [3 ]
Reentila, O. [3 ]
Mattila, M. [3 ]
Fontaine, C. [4 ]
Arnoult, A. [4 ]
机构：
[1] Univ Essex, Dept Comp & Elect Syst, Colchester CO4 3SQ, Essex, England
[2] Akdeniz Univ, Dept Phys, Fac Arts & Sci, TR-07058 Antalya, Turkey
[3] Aalto Univ, Optoelect Lab, Helsinki 02015, Finland
[4] LAAS, F-31077 Toulouse 4, France
来源：
MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 03期
关键词：
Photoluminescence; GaInNAs/GaAs QWs; Modulation doping; MOLECULAR-BEAM EPITAXY;
D O I：
10.1016/j.mejo.2008.06.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-type-doped material. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：406 / 409
页数：4
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