LATERAL PROFILING OF OXIDE CHARGE AND INTERFACE TRAPS NEAR MOSFET JUNCTIONS

被引：73
|
作者：
CHEN, WL
BALASINSKI, A
MA, TP
机构：
[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
[2] YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 01期
关键词：
D O I：
10.1109/16.249443
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new technique to measure the lateral distributions of both interface traps and trapped oxide charge near the source/drain junctions in MOSFET's will be presented in detail. This technique derives from the charge pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. This paper will cover the experimental details of this technique, along with some illustrative results. The various issues involved in its implementation and its practical limitations will also be discussed.
引用
收藏
页码：187 / 196
页数：10
相关论文
共 50 条
  • [31] Interface Traps in Surface-Potential-Based MOSFET Models
    Chen, Zuhui
    Zhou, Xing
    See, Guan Huei
    Zhu, Zhaomin
    Zhu, Guojun
    NANOTECH CONFERENCE & EXPO 2009, VOL 3, TECHNICAL PROCEEDINGS, 2009, : 542 - 545
  • [32] Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps
    Fiorenza, Patrick
    Zignale, Marco
    Camalleri, Marco
    Scalia, Laura
    Zanetti, Edoardo
    Saggio, Mario
    Giannazzo, Filippo
    Roccaforte, Fabrizio
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 169
  • [33] OBSERVATION AND CHARACTERIZATION OF NEAR-INTERFACE OXIDE TRAPS WITH C-V TECHNIQUES
    COHEN, NL
    PAULSEN, RE
    WHITE, MH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (11) : 2004 - 2009
  • [34] Characterization of individual interface traps with charge pumping
    Saks, NS
    Groeseneken, G
    DeWolf, I
    APPLIED PHYSICS LETTERS, 1996, 68 (10) : 1383 - 1385
  • [35] Characterization of individual interface traps with charge pumping
    Appl Phys Lett, 10 (1383):
  • [36] Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications
    Son, Younghwan
    Baek, Chang-Ki
    Han, In-Shik
    Joo, Han-Soo
    Goo, Tae-Gyu
    Yoo, Ooksang
    Choi, Wonho
    Ji, Hee-Hwan
    Lee, Hi-Deok
    Kim, Dae M.
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2009, 8 (05) : 654 - 658
  • [37] CARRIER FLUCTUATION NOISE IN A MOSFET CHANNEL DUE TO TRAPS IN OXIDE
    JINDAL, RP
    VANDERZIEL, A
    SOLID-STATE ELECTRONICS, 1978, 21 (06) : 901 - 903
  • [38] A Comprehensive Characterization Method for Lateral Profiling of Interface Traps and Trapped Charges in P-SONOS Cell Devices
    Guo, Jyh-Chyurn
    Du, Pei-Ying
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2017, 17 (01) : 121 - 129
  • [39] The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics
    Kuzum, Duygu
    Park, Jin-Hong
    Krishnamohan, Tejas
    Wong, H. -S. Philip
    Saraswat, Krishna C.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (04) : 1015 - 1022
  • [40] LATERAL NONUNIFORMITIES AND THE MOSFET MOBILITY STEP NEAR THRESHOLD
    WIKSTROM, JA
    VISWANATHAN, CR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2378 - 2383
12345