LATERAL PROFILING OF OXIDE CHARGE AND INTERFACE TRAPS NEAR MOSFET JUNCTIONS

被引：73
|
作者：
CHEN, WL
BALASINSKI, A
MA, TP
机构：
[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
[2] YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 01期
关键词：
D O I：
10.1109/16.249443
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new technique to measure the lateral distributions of both interface traps and trapped oxide charge near the source/drain junctions in MOSFET's will be presented in detail. This technique derives from the charge pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. This paper will cover the experimental details of this technique, along with some illustrative results. The various issues involved in its implementation and its practical limitations will also be discussed.
引用
收藏
页码：187 / 196
页数：10
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