LATERAL PROFILING OF OXIDE CHARGE AND INTERFACE TRAPS NEAR MOSFET JUNCTIONS

被引：73
|
作者：
CHEN, WL
BALASINSKI, A
MA, TP
机构：
[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
[2] YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 01期
关键词：
D O I：
10.1109/16.249443
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new technique to measure the lateral distributions of both interface traps and trapped oxide charge near the source/drain junctions in MOSFET's will be presented in detail. This technique derives from the charge pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. This paper will cover the experimental details of this technique, along with some illustrative results. The various issues involved in its implementation and its practical limitations will also be discussed.
引用
收藏
页码：187 / 196
页数：10
相关论文
共 50 条
  • [1] A NEW TECHNIQUE FOR MEASURING LATERAL DISTRIBUTION OF OXIDE CHARGE AND INTERFACE TRAPS NEAR MOSFET JUNCTIONS
    CHEN, WL
    MA, TP
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (07) : 393 - 395
  • [2] Improved method for lateral profiling of interface traps and oxide charge in MOSFET devices
    Melik-Martirosian, Ashot
    Ma, T.P.
    International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 1999, : 90 - 93
  • [3] Lateral profiling of interface traps and oxide charge in MOSFET devices:: Charge pumping versus DCIV
    Melik-Martirosian, A
    Ma, TP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (10) : 2303 - 2309
  • [4] Direct lateral profiling of both interface traps and oxide charge in thin gate MOSFET devices
    Chen, C
    Ma, TP
    1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1996, : 230 - 231
  • [5] Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's
    Chen, C
    Ma, TP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (02) : 512 - 520
  • [6] Minimized constrains for lateral profiling of hot-carrier-induced oxide charge and interface traps in MOSFETs
    Lu, CY
    Chang-Liao, KS
    IEEE ELECTRON DEVICE LETTERS, 2004, 25 (02) : 98 - 100
  • [7] A generalized EKV charge-based MOSFET model including oxide and interface traps
    Zhang, Chun-Min
    Jazaeri, Farzan
    Borghello, Giulio
    Mattiazzo, Serena
    Baschirotto, Andrea
    Enz, Christian
    SOLID-STATE ELECTRONICS, 2021, 177
  • [8] OBSERVATION OF NEAR-INTERFACE OXIDE TRAPS WITH THE CHARGE-PUMPING TECHNIQUE
    PAULSEN, RE
    SIERGIEJ, RR
    FRENCH, ML
    WHITE, MH
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (12) : 627 - 629
  • [9] Detection and Characterization of Single Near-Interface Oxide Traps with the Charge Pumping Method
    Tsuchiya, Toshiaki
    Hori, Masahiro
    Ono, Yukinori
    2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2018,
  • [10] Observation of single interface traps in submicron MOSFET's by charge pumping
    Groeseneken, GV
    DeWolf, I
    Bellens, R
    Maes, HE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (06) : 940 - 945
12345