TEMPERATURE-DEPENDENCE OF THE DIRECT BAND-GAP OF INXGA1-XAS (X=0.06 AND 0.15)

被引：69

作者：

HANG, Z

YAN, D

POLLAK, FH

PETTIT, GD

WOODALL, JM

机构：

[1] CUNY GRAD SCH & UNIV CTR,NEW YORK,NY 10036

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.44.10546

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoreflectance has been used to measure the direct band gap of InxGa1-xAs (x = 0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the band gap and broadening function.

引用

页码：10546 / 10550

页数：5

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