TEMPERATURE-DEPENDENCE OF THE DIRECT BAND-GAP OF INXGA1-XAS (X=0.06 AND 0.15)

被引：69
|
作者：
HANG, Z
YAN, D
POLLAK, FH
PETTIT, GD
WOODALL, JM
机构：
[1] CUNY GRAD SCH & UNIV CTR,NEW YORK,NY 10036
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
PHYSICAL REVIEW B | 1991年 / 44卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.44.10546
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoreflectance has been used to measure the direct band gap of InxGa1-xAs (x = 0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the band gap and broadening function.
引用
收藏
页码：10546 / 10550
页数：5
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