EFFECTS OF PLASMA POTENTIAL ON DIAMOND DEPOSITION AT LOW-PRESSURE USING MAGNETOMICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION

被引：3
|
作者：
WEI, J
KAWARADA, H
SUZUKI, J
MA, JS
HIRAKI, A
机构：
[1] WASEDA UNIV, SCH SCI & ENGN, SHINJUKU, TOKYO 165, JAPAN
[2] SHIMADZU CO, KYOTO 615, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1991年 / 30卷 / 06期
关键词：
DIAMOND FILM; CVD; ECR; PLASMA POTENTIAL; POTENTIAL DIFFERENCE;
D O I：
10.1143/JJAP.30.1279
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high-quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.
引用
收藏
页码：1279 / 1280
页数：2
相关论文
共 50 条
  • [21] SURFACE PROCESSES IN LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
    HOTTIER, F
    CADORET, R
    JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 199 - 206
  • [22] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TANTALUM SILICIDE
    REYNOLDS, GJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (06) : 1483 - 1490
  • [23] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TANTALUM SILICIDE
    WILLIAMS, DS
    COLEMAN, E
    BROWN, JM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) : 2637 - 2644
  • [24] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN
    BROADBENT, EK
    RAMILLER, CL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C101 - C101
  • [25] THE EFFECT OF OXYGEN IN DIAMOND DEPOSITION BY MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
    LIOU, Y
    INSPEKTOR, A
    WEIMER, R
    KNIGHT, D
    MESSIER, R
    JOURNAL OF MATERIALS RESEARCH, 1990, 5 (11) : 2305 - 2312
  • [26] SMOOTH DIAMOND FILM DEPOSITION BY AC DISCHARGE PLASMA CHEMICAL VAPOR-DEPOSITION
    CHOI, SY
    ZHANG, CJ
    LEE, GS
    THIN SOLID FILMS, 1991, 206 (1-2) : 204 - 207
  • [27] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INGAP USING TERTIARYBUTYLPHOSPHINE
    KAWAKYU, Y
    HORI, H
    ISHIKAWA, H
    MASHITA, M
    JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) : 561 - 564
  • [28] GROWTH OF DIAMOND FILMS AT LOW-PRESSURE USING MAGNETOMICROWAVE PLASMA CVD
    WEI, J
    KAWARADA, H
    SUZUKI, J
    HIRAKI, A
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 1201 - 1205
  • [29] GROWTH OF DIAMOND FILMS BY MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION
    GAO, KL
    WANG, CL
    ZHAN, RJ
    PENG, DK
    MENG, GY
    XIANG, ZL
    CHINESE PHYSICS LETTERS, 1991, 8 (07) : 348 - 351
  • [30] DIAMOND CRYSTAL-GROWTH BY PLASMA CHEMICAL VAPOR-DEPOSITION
    CHANG, CP
    FLAMM, DL
    IBBOTSON, DE
    MUCHA, JA
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1744 - 1748
12345