HIGH-VOLTAGE THIN-FILM TRANSISTORS MANUFACTURED WITH PHOTOLITHOGRAPHY AND WITH TA2O5 AS THE GATE OXIDE

被引：26
|
作者：
KALLFASS, T
LUEDER, E
机构：
来源：
THIN SOLID FILMS | 1979年 / 61卷 / 02期
关键词：
D O I：
10.1016/0040-6090(79)90469-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：259 / 264
页数：6
相关论文
共 50 条
  • [31] Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-band-gap Ta2O5
    Lan, Linfeng
    Xiong, Nana
    Xiao, Peng
    Li, Min
    Xu, Hua
    Yao, Rihui
    Wen, Shangsheng
    Peng, Junbiao
    APPLIED PHYSICS LETTERS, 2013, 102 (24)
  • [32] METASTABLE EFFECTS IN HIGH-VOLTAGE AMORPHOUS-SILICON THIN-FILM TRANSISTORS
    SHAW, JG
    HACK, MG
    MARTIN, RA
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2667 - 2672
  • [33] Fabrication and Performance of a Ta2O5 Thin Film pH Sensor Manufactured Using MEMS Processes
    Guo, Yuzhen
    Zhang, Zengxing
    Yao, Bin
    Chai, Jin
    Zhang, Shiqiang
    Liu, Jianwei
    Zhao, Zhou
    Xue, Chenyang
    SENSORS, 2023, 23 (13)
  • [34] EFFECT OF DEPOSITION TEMPERATURE ON DIELECTRIC-PROPERTIES OF PECVD TA2O5 THIN-FILM
    MOON, HS
    LEE, JS
    HAN, SW
    PARK, JW
    LEE, JH
    YANG, SK
    PARK, HH
    JOURNAL OF MATERIALS SCIENCE, 1994, 29 (06) : 1545 - 1548
  • [35] Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors
    Avis, Christophe
    Kim, Youn Goo
    Jang, Jin
    JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (34) : 17415 - 17420
  • [36] A NEW SELF-ALIGNED SUBTRACTIVE GATE PROCESS FOR HIGH-VOLTAGE AND COMPLEMENTARY POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    WU, IW
    HUANG, TY
    LEWIS, AG
    CHUANG, TC
    CHIANG, A
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (09) : 4900 - 4902
  • [37] CHARACTERISTICS OF TA2O5 THIN-FILM PREPARED BY ELECTRON-BEAM HEATING METHOD
    SEKIDO, Y
    ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1994, 77 (06): : 54 - 61
  • [38] Synthesis and Physicochemical Properties of SiO2 - Ta2O5 Thin-Film Systems and Powders
    Malchik, A. G.
    Litovkin, S. V.
    Rodionov, P. V.
    Kryuchkova, S. O.
    ALL-RUSSIAN RESEARCH-TO-PRACTICE CONFERENCE ECOLOGY AND SAFETY IN THE TECHNOSPHERE, 2018, 115
  • [39] Room temperature fabricated high performance IAZO thin film transistors with dual-active-layer structure and sputtered Ta2O5 gate insulator
    Xu, Weidong
    Zhang, Guanqun
    Feng, Xianjin
    JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 862 (862)
  • [40] Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material
    Liu, J-W
    Liao, M-Y
    Imura, M.
    Watanabe, E.
    Oosato, H.
    Koide, Y.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (24)
12345