共 50 条
- [41] RECOMBINATION PROCESSES NEAR-SURFACE OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (03): : 357 - 360
- [43] PHOTO PRODUCTION OF SURFACE RECOMBINATION CENTERS IN GALLIUM-ARSENIDE APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 42 (03): : 233 - 237
- [46] THE BEWILDERING SURFACE ATTRIBUTES OF GALLIUM-ARSENIDE A CATHODOLUMINESCENCE PERSPECTIVE PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 69 (04): : 553 - 575
- [48] THE NATURE OF TRAPS IN ANODIC OXIDE ON A GALLIUM-ARSENIDE SURFACE VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1986, 27 (05): : 53 - 57
- [50] SURFACE OF GALLIUM-ARSENIDE ALLOYED BY ANTIMONY ISOVALENT ADMIXTURE PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 16 (02): : 43 - 47