THE NATURE OF TRAPS IN ANODIC OXIDE ON A GALLIUM-ARSENIDE SURFACE

被引：0
|
作者：
ZOTEEV, AV
KASHKAROV, PK
OBRAZTSOV, AN
SOSNOVSKIKH, YN
SOROKIN, IN
机构：
来源：
VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA | 1986年 / 27卷 / 05期
关键词：
D O I：
暂无
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
引用
收藏
页码：53 / 57
页数：5
相关论文
共 50 条
  • [1] THE BREAKDOWN OF ANODIC OXIDE-FILMS ON THE SURFACE OF GALLIUM-ARSENIDE
    LIASHENKO, AV
    TARANTOV, YA
    VESTNIK LENINGRADSKOGO UNIVERSITETA SERIYA FIZIKA KHIMIYA, 1982, (02): : 94 - 96
  • [2] NATURE OF TRAPS IN AN OXIDE FILM ON A GALLIUM ARSENIDE SURFACE.
    Zoteev, A.V.
    Kashkarov, P.K.
    Obraztsov, A.N.
    Sosnovskikh, Yu.N.
    Sorokin, I.N.
    Moscow University Physics Bulletin (English Translation of Vestnik Moskovskogo Universiteta, Fizik, 1986, 41 (05): : 66 - 70
  • [3] PROBLEM OF THE NATURE OF SOME ELECTRON TRAPS IN GALLIUM-ARSENIDE
    GLORIOZOVA, RI
    GRISHINA, SP
    KOLESNIK, LI
    OMELYANOVSKII, EM
    POLYAKOV, AY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 906 - 909
  • [4] SOME INVESTIGATIONS ON ANODIC OXIDE-FILMS ON GALLIUM-ARSENIDE
    GHOSH, C
    POLHAMUS, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 837 - 839
  • [5] CHEMICAL COMPOSITION OF ANODIC OXIDE-FILMS ON GALLIUM-ARSENIDE
    NIKITINA, NG
    PETROVA, VZ
    PODOBED, GE
    SOROKIN, IN
    JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1978, 51 (09): : 1837 - 1839
  • [6] STRUCTURAL INHOMOGENEITY IN ANODIC OXIDE-FILMS ON GALLIUM-ARSENIDE
    SOROKIN, IN
    NOSIKOV, SV
    GATKO, LE
    KLEBANOVA, NA
    KANDIDOVA, LA
    INORGANIC MATERIALS, 1981, 17 (05) : 527 - 531
  • [7] SHALLOW POSITRON TRAPS IN GALLIUM-ARSENIDE
    DANNEFAER, S
    MASCHER, P
    KERR, D
    SHALLOW IMPURITIES IN SEMICONDUCTORS 1988, 1989, 95 : 283 - 288
  • [8] ANODIC-OXIDATION OF GALLIUM-ARSENIDE
    ARORA, BM
    BIDNURKAR, MG
    SOLID-STATE ELECTRONICS, 1976, 19 (07) : 657 - 658
  • [9] ANODIC-OXIDATION OF GALLIUM-ARSENIDE
    WOLKENBERG, A
    WASILEWSKA, B
    PRZEMYSL CHEMICZNY, 1983, 62 (06): : 342 - 344
  • [10] SHALLOW POSITRON TRAPS IN GALLIUM-ARSENIDE
    DANNEFAER, S
    MASCHER, P
    KERR, D
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (95): : 283 - 288
12345