共 50 条
- [1] PHOTOGALVANIC EFFECT IN PIEZOELECTRICS - QUANTITATIVE THEORY FOR INTERBAND-TRANSITIONS IN GALLIUM-ARSENIDE PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1981, 107 (01): : 61 - 68
- [2] THEORY OF THE DEMBER EMF ASSOCIATED WITH LOW-TEMPERATURE INTERBAND-TRANSITIONS IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (07): : 757 - 759
- [3] CATHODOLUMINESCENCE FROM INTERBAND-TRANSITIONS IN GERMANIUM(111) AND GALLIUM-ARSENIDE(100) CRYSTALS PHYSICAL REVIEW B, 1995, 52 (03): : 1452 - 1455
- [4] BALLISTIC PHOTOGALVANIC EFFECT IN INTERBAND-TRANSITIONS IN GAAS FIZIKA TVERDOGO TELA, 1988, 30 (10): : 3111 - 3117
- [5] LINEAR PHOTOGALVANIC EFFECT IN HOLE GALLIUM-ARSENIDE ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1981, 81 (06): : 2080 - 2094
- [6] OPTICAL-PROPERTIES OF INTERBAND-TRANSITIONS IN THE OXYGEN-PLASMA-ANODIZED FILM ON GALLIUM-ARSENIDE(100) PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 192 (01): : 217 - 222
- [9] THEORY OF SURFACE POLARITONS ASSOCIATED WITH DIRECT INTERBAND-TRANSITIONS IN GERMANIUM BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (01): : 45 - 45
- [10] INFLUENCE OF PRESSURE ON INTERBAND TUNNEL CURRENT IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 129 - 131