THEORY OF THE DEMBER EMF ASSOCIATED WITH LOW-TEMPERATURE INTERBAND-TRANSITIONS IN GALLIUM-ARSENIDE

被引:0
|
作者
BELINICHER, VI
NOVIKOV, VN
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 07期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:757 / 759
页数:3
相关论文
共 50 条
  • [1] PHOTOGALVANIC EFFECT IN PIEZOELECTRICS - QUANTITATIVE THEORY FOR INTERBAND-TRANSITIONS IN GALLIUM-ARSENIDE
    BELINICHER, VI
    NOVIKOV, VN
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1981, 107 (01): : 61 - 68
  • [2] SURFACE PHOTOGALVANIC EFFECT IN SOLIDS - THEORY AND EXPERIMENTS FOR INTERBAND-TRANSITIONS IN GALLIUM-ARSENIDE
    ALPEROVICH, VL
    BELINICHER, VI
    NOVIKOV, VN
    TEREKHOV, AS
    ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1981, 80 (06): : 2298 - 2312
  • [3] CATHODOLUMINESCENCE FROM INTERBAND-TRANSITIONS IN GERMANIUM(111) AND GALLIUM-ARSENIDE(100) CRYSTALS
    XU, XL
    HAO, LY
    XU, KZ
    CHEN, TP
    FUNG, S
    PHYSICAL REVIEW B, 1995, 52 (03): : 1452 - 1455
  • [4] INFLUENCE OF AN OSCILLATORY DEMBER EMF ON THE PHOTO-EMF SPECTRA OF GALLIUM-ARSENIDE
    ALPEROVICH, VL
    KRAVCHENKO, AF
    PAKHANOV, NA
    TEREKHOV, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09): : 1052 - 1054
  • [5] LOW-TEMPERATURE IRRADIATION OF GALLIUM-ARSENIDE
    IVANYUKOVICH, VA
    KARAS, VI
    LOMAKO, VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 111 - 112
  • [6] LOW-TEMPERATURE PHOTOLUMINESCENCE OF GALLIUM-ARSENIDE
    STOPACHINSKY, VB
    ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1977, 72 (02): : 592 - 601
  • [7] LOW-TEMPERATURE CONTACTS TO GALLIUM-ARSENIDE
    VARSHAVA, SS
    VAINBERG, VV
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1980, 23 (01) : 279 - 281
  • [8] OPTICAL-PROPERTIES OF INTERBAND-TRANSITIONS IN THE OXYGEN-PLASMA-ANODIZED FILM ON GALLIUM-ARSENIDE(100)
    XU, XL
    ZHU, LX
    CHEN, TP
    FUNG, S
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 192 (01): : 217 - 222
  • [9] LOW-TEMPERATURE OPTICAL BISTABILITY OF THE PHOTOFLOW IN GALLIUM-ARSENIDE
    RYABUSHKIN, OA
    SERGEEV, VI
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (11): : 653 - 656
  • [10] LOW-TEMPERATURE OHMIC CONTACTS TO GALLIUM-ARSENIDE USING IN AND AL
    HEALY, MP
    MATTAUCH, RJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (03) : 374 - 374