ATOMIC AND ELECTRONIC-STRUCTURE OF THIN-FILMS OF MN ON PD(111)

被引：37

作者：

TIAN, D ^{[1
]}

LI, H ^{[1
]}

WU, SC ^{[1
]}

JONA, F ^{[1
]}

MARCUS, PM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.45.3749

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial films of Mn can be grown on Pd{111} to thickness of the order of 15-20 layers. Vacuum deposition on a room-temperature substrate produces a three-symmetric 1 x 1 phase with in-plane lattice constant a = 2.75 angstrom (pseudomorphic to Pd{111} and bulk interlayer spacing d(bulk) = 2.16 angstrom. This structure probably corresponds to strained magnetic gamma-Mn. Vacuum deposition on a 150-degrees-C substrate produces a sixfold-symmetric unroofted-radical 3 x unroofted-radical 3-30-degrees structure, which is probably a bulk phase with in-plane lattice constant a = 4.76 angstrom. The atomic structure of this phase is unknown, but may be related to alpha-Mn.

引用

页码：3749 / 3754

页数：6

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