ATOMIC AND ELECTRONIC-STRUCTURE OF THIN-FILMS OF MN ON PD(111)

被引:37
|
作者
TIAN, D [1 ]
LI, H [1 ]
WU, SC [1 ]
JONA, F [1 ]
MARCUS, PM [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 07期
关键词
D O I
10.1103/PhysRevB.45.3749
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Epitaxial films of Mn can be grown on Pd{111} to thickness of the order of 15-20 layers. Vacuum deposition on a room-temperature substrate produces a three-symmetric 1 x 1 phase with in-plane lattice constant a = 2.75 angstrom (pseudomorphic to Pd{111} and bulk interlayer spacing d(bulk) = 2.16 angstrom. This structure probably corresponds to strained magnetic gamma-Mn. Vacuum deposition on a 150-degrees-C substrate produces a sixfold-symmetric unroofted-radical 3 x unroofted-radical 3-30-degrees structure, which is probably a bulk phase with in-plane lattice constant a = 4.76 angstrom. The atomic structure of this phase is unknown, but may be related to alpha-Mn.
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页码:3749 / 3754
页数:6
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