MOSSBAUER STUDIES OF KR-83 IMPLANTED IN SEMICONDUCTORS AND METALS

被引：2

作者：

KEMERINK, GJ

BUKSHPAN, S

DEWAARD, H

机构：

来源：

HYPERFINE INTERACTIONS | 1979年 / 7卷 / 05期

关键词：

D O I：

10.1007/BF01021517

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

引用

页码：339 / 351

页数：13

共 50 条

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