INTERPRETATION OF TRANSIENT CURRENTS IN AMORPHOUS-SILICON HYDRIDE P-I-N AND N-I-N DEVICES

被引：16
|
作者：
SHAPIRO, FR
BARYAM, Y
SILVER, M
机构：
[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27599
[2] WEIZMANN INST SCI,MAT RES DEPT,IL-76100 REHOVOT,ISRAEL
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期
关键词：
D O I：
10.1109/16.40938
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2785 / 2788
页数：4
相关论文
共 50 条
  • [41] EXPERIMENTAL-STUDY OF FORWARD CURRENT TRANSIENTS IN AMORPHOUS-SILICON P-I-N STRUCTURES
    YAN, B
    ELIAT, A
    ADRIAENSSENS, GJ
    APPLIED PHYSICS LETTERS, 1994, 65 (18) : 2338 - 2340
  • [42] STABILITY OF P-I-N HYDROGENATED AMORPHOUS-SILICON SOLAR-CELLS TO LIGHT EXPOSURE
    UCHIDA, Y
    NISHIURA, M
    SAKAI, H
    HARUKI, H
    SOLAR CELLS, 1983, 9 (1-2): : 3 - 12
  • [43] NUMERICAL MODELING OF MULTIJUNCTION, AMORPHOUS-SILICON BASED P-I-N SOLAR-CELLS
    PAWLIKIEWICZ, AH
    GUHA, S
    CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 251 - 255
  • [44] POSITION-SENSITIVE PHOTODETECTOR BASED ON HYDROGENATED AMORPHOUS-SILICON P-I-N JUNCTIONS
    CHUMAK, VA
    BERTOLOTTI, M
    FERRARI, A
    BARTOLONI, F
    EVANGELISTI, F
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (02): : 202 - 206
  • [45] Photocurrent in microcrystalline hydrogenated silicon p-i-n devices
    Fernandes, M
    Vieira, M
    Maçarico, A
    Koynov, S
    Fantoni, A
    Schwarz, R
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 : 193 - 198
  • [46] Comparison of p-i-n and n-i-n carbon nanotube FETs regarding high-frequency performance
    Pulfrey, D. L.
    Chen, Li
    SOLID-STATE ELECTRONICS, 2009, 53 (09) : 935 - 939
  • [47] Transparent conducting oxide contacts for n-i-p and p-i-n amorphous silicon solar cells
    Hegedus, SS
    Buchanan, WA
    Eser, E
    Phillips, JE
    Shafarman, WN
    NREL/SNL PHOTOVOLTAICS PROGRAM REVIEW - PROCEEDINGS OF THE 14TH CONFERENCE: A JOINT MEETING, 1997, (394): : 547 - 555
  • [48] Spectral tuned amorphous silicon p-i-n for DNA detection
    Caputo, D.
    de Cesare, G.
    Nascetti, A.
    Negri, R.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 2004 - 2006
  • [49] Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures
    Terukov, EI
    Gusev, OB
    Kon'kov, OI
    Undalov, YK
    Stutzmann, M
    Janotta, A
    Mell, H
    Kleider, JP
    SEMICONDUCTORS, 2002, 36 (11) : 1240 - 1243
  • [50] Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures
    E. I. Terukov
    O. B. Gusev
    O. I. Kon’kov
    Yu. K. Undalov
    M. Stutzmann
    A. Janotta
    H. Mell
    J. P. Kleider
    Semiconductors, 2002, 36 : 1240 - 1243
12345