INTERPRETATION OF TRANSIENT CURRENTS IN AMORPHOUS-SILICON HYDRIDE P-I-N AND N-I-N DEVICES

被引：16

作者：

SHAPIRO, FR

BARYAM, Y

SILVER, M

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27599

[2] WEIZMANN INST SCI,MAT RES DEPT,IL-76100 REHOVOT,ISRAEL

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期

关键词：

D O I：

10.1109/16.40938

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2785 / 2788

页数：4

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