CHARACTERIZATION OF OXYGEN IN SILICON BY IR ABSORPTION - REVIEW

被引:0
|
作者
PAJOT, B [1 ]
机构
[1] UNIV PARIS 11,INFRAROUGE LAB,F-91405 ORSAY,FRANCE
关键词
D O I
暂无
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
引用
收藏
页码:293 / 303
页数:11
相关论文
共 50 条
  • [21] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED
    BOSOMWORTH, DR
    HAYES, W
    SPRAY, ARL
    WATKINS, GD
    PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +
  • [22] FAR-INFRARED ABSORPTION BY OXYGEN IN SILICON
    YAMADAKANETA, H
    OGAWA, T
    MURAISHI, S
    KANETA, C
    WADA, K
    APPLIED PHYSICS LETTERS, 1988, 53 (24) : 2391 - 2393
  • [23] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM
    KAISER, W
    KECK, PH
    LANGE, CF
    PHYSICAL REVIEW, 1956, 101 (04): : 1264 - 1268
  • [24] DETERMINATION OF OXYGEN CONCENTRATION PROFILES IN SILICON-CRYSTALS OBSERVED BY SCANNING IR ABSORPTION USING SEMICONDUCTOR-LASER
    OHSAWA, A
    HONDA, K
    OHKAWA, S
    UEDA, R
    APPLIED PHYSICS LETTERS, 1980, 36 (02) : 147 - 148
  • [25] Characterization of silicon absorption by Equisetum arvense
    Gregoire, C.
    Remus-Borel, W.
    Arsenault-Labrecque, G.
    Belanger, R. R.
    PHYTOPATHOLOGY, 2009, 99 (06) : S192 - S192
  • [26] Near IR absorption in heavily doped silicon - An empirical approach
    Falk, RA
    ISTFA 2000: PROCEEDINGS OF THE 26TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 2000, : 121 - 127
  • [27] Enhancement of IR Absorption of Silicon by Its Doping with Sulfur Atoms
    Podlesnykh, I. M.
    Kovalev, M. S.
    Kabachkov, E. N.
    Dravin, V. A.
    Kudryashov, S. I.
    BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2025, 52 (01) : 7 - 13
  • [28] EMISSION AND IR-ABSORPTION-SPECTRA OF LUMINESCENT FILMS ON SILICON
    VITMAN, RF
    KAPITONOVA, LM
    LEBEDEV, AA
    STARUKHIN, AN
    RAZBIRIN, BS
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1993, 19 (06): : 10 - 13
  • [29] INTRIGUING ABSORPTION-BAND BEHAVIOR OF IR REFLECTANCE SPECTRA OF SILICON DIOXIDE ON SILICON
    WONG, JS
    YEN, YS
    APPLIED SPECTROSCOPY, 1988, 42 (04) : 598 - 604
  • [30] THE IR PROPERTIES IN SOI WAFERS FORMED BY OXYGEN IMPLANTATION INTO SILICON
    LU, DT
    ZHENG, LR
    WANG, ZL
    HEMMENT, PLF
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 705 - 709