METAL PRECIPITATES IN SILICON P-N JUNCTIONS

被引：281

|

作者：

GOETZBERGER, A

SHOCKLEY, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1960年 / 31卷 / 10期

关键词：

D O I：

10.1063/1.1735455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1821 / 1824

页数：4

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