SURFACE CHANNEL STUDIES ON SILICON P-N JUNCTIONS

被引：0

|

作者：

SOLOMON, R

JOHNSON, PO

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1959年 / 106卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：C208 / C208

页数：1

相关论文

共 50 条

[1] SURFACE EFFECTS ON SILICON P-N JUNCTIONS - ORIGIN OF ANOMALOUS CHANNEL CURRENTS
GROVE, AS
FITZGERA.DJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (09) : 508 - &
[2] ANOMALOUS SURFACE CHANNELS ON SILICON P-N JUNCTIONS
SOLOMON, R
JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1791 - 1799
[3] INHOMOGENEITY OF SURFACE CHARGE AND SURFACE BREAKDOWN IN SILICON P-N JUNCTIONS
LITVINOV, RO
SADOVNIC.AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (04): : 462 - &
[4] STUDIES ON OPTICAL COUPLING BETWEEN SILICON P-N JUNCTIONS
HAITZ, RH
SOLID-STATE ELECTRONICS, 1965, 8 (04) : 417 - &
[5] ON THE DELINEATION OF P-N JUNCTIONS IN SILICON
ILES, PA
COPPEN, PJ
JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) : 1514 - 1514
[6] MULTIPLICATION IN SILICON P-N JUNCTIONS
MOLL, JL
PHYSICAL REVIEW, 1965, 137 (3A): : A938 - &
[7] p-n junctions in silicon nanowires
Goncher, G.
Solanki, R.
Carruthers, J. R.
Conley, J., Jr.
Ono, Y.
JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (07) : 1509 - 1512
[8] p-n junctions in silicon nanowires
G. Goncher
R. Solanki
J. R. Carruthers
J. Conley
Y. Ono
Journal of Electronic Materials, 2006, 35 : 1509 - 1512
[9] GATE-CONTROLLED SURFACE BREAKDOWN IN SILICON P-N JUNCTIONS
GRAAFF, HCD
PHILIPS RESEARCH REPORTS, 1970, 25 (01): : 21 - +
[10] THERMAL BREAKDOWN IN SILICON P-N JUNCTIONS
TAUC, J
ABRAHAM, A
PHYSICAL REVIEW, 1957, 108 (04): : 936 - 937

← 1 2 3 4 5 →