METAL PRECIPITATES IN SILICON P-N JUNCTIONS

被引：281
|
作者：
GOETZBERGER, A
SHOCKLEY, W
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1960年 / 31卷 / 10期
关键词：
D O I：
10.1063/1.1735455
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1821 / 1824
页数：4
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