IMPACT IONIZATION IN GAAS-MESFETS - REPLY

被引：0

|

作者：

HUI, K ^{[1
]}

HU, C ^{[1
]}

GEORGE, P ^{[1
]}

KO, PK ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 02期

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D O I：

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中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：81 / 81

页数：1

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