IMPACT IONIZATION IN GAAS-MESFETS - REPLY

被引：0
|
作者：
HUI, K [1 ]
HU, C [1 ]
GEORGE, P [1 ]
KO, PK [1 ]
机构：
[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：81 / 81
页数：1
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