共 50 条
- [1] INVESTIGATION OF TURN-OFF OF A P-N-P-N STRUCTURE BY A GATE CURRENT PULSESOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (01): : 176 - &AYAZYAN, REBURTSEV, EFGREKHOV, IVLINIICHU.IA
- [2] DYNAMICS OF AN ELECTRIC-FIELD IN THE BASE LAYERS OF A P-N-P-N STRUCTURE TURNED OFF BY THE GATE CURRENTSOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (11): : 1245 - 1247AYAZYAN, REGREKHOV, IVSHENDEREI, SV
- [3] PROPAGATION OF TURNED-ON STATE IN P-N-P-N STRUCTURESSOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 255 - 257DERMENZH.PGEVSEEV, YA
- [4] GATE TURN-OFF IN P-N-P-N DEVICESIEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) : 590 - &WOLLEY, ED
- [5] EXPERIMENTAL INVESTIGATION OF CHARGE-DISTRIBUTION IN P-N-P-N-STRUCTURES TURNED OFF BY GATE CURRENTRADIOTEKHNIKA I ELEKTRONIKA, 1972, 17 (09): : 1880 - &AYAZYAN, RESHULEKIN, AFGREKHOV, IVGOLOVANO.OVMAKEVNIN.LILINIICHU.IA
- [6] LATCHUP CRITERIA IN INSULATED GATE P-N-P-N STRUCTURESIEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 594 - 598HACHAD, SCROS, CDAREES, DDORKEL, JMLETURCQ, P
- [7] ON STATE OF P-N-P-N STRUCTURESRADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (08): : 1249 - &KUZMIN, VAPARMENOV, YA
- [8] PROPAGATION OF TURNED-ON STATE IN A P-N-P-N STRUCTURESOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (07): : 1191 - &GREKHOV, IVSERGEEV, VG
- [9] CURRENT-VOLTAGE CHARACTERISTIC OF NONSATURATED P-N-P-N STRUCTURESRADIOTEKHNIKA I ELEKTRONIKA, 1989, 34 (11): : 2393 - 2400LINIYCHUK, IASVIRIN, AV
- [10] Turn-off time of p-n-p-n structures in small reverse current and voltage regimesSoviet journal of communications technology & electronics, 1988, 33 (12): : 171 - 173Rabkin, P.B.Selenikov, K.L.