LATCHUP CRITERIA IN INSULATED GATE P-N-P-N STRUCTURES

被引：6

作者：

HACHAD, S ^{[1
]}

CROS, C ^{[1
]}

DAREES, D ^{[1
]}

DORKEL, JM ^{[1
]}

LETURCQ, P ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,F-31077 TOULOUSE,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 03期

关键词：

D O I：

10.1109/T-ED.1985.21983

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：594 / 598

页数：5

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