共 50 条
- [41] EFFECTIVENESS OF AN EXCESS CHARGE IN THE PROCESS OF TURN ON OF P-N-P-N STRUCTURES IN MULTIDIMENSIONAL APPROXIMATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 806 - 810
- [42] RATIO OF DIFFUSION AND DRIFT DURING SPREADING OF THE 'ON' STATE IN P-N-P-N STRUCTURES. Soviet journal of communications technology & electronics, 1986, 31 (02): : 122 - 126
- [43] POSSIBILITY OF INCREASING LIMITING RATE OF RISE OF CURRENT IN TURNING ON OF A P-N-P-N STRUCTURE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (06): : 1016 - &
- [44] VARIATION OF SWITCHING TIME OF SILICON P-N-P-N STRUCTURES IRRADIATED BY FAST ELECTRONS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 89 (02): : K227 - K230
- [49] EFFECTIVENESS OF AN EXCESS CHARGE IN THE PROCESS OF TURN ON OF p-n-p-n STRUCTURES IN MULTIDIMENSIONAL APPROXIMATION. Soviet physics. Semiconductors, 1980, 14 (07): : 806 - 810
- [50] SOME NEW POSSIBILITIES OF FAST SWITCHING OF LARGE-AREA P-N-P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 206 - 208