TRAPPING LEVEL MEASUREMENTS OF IMPLANTED AND ANNEALED SI P-N-JUNCTIONS

被引：0

作者：

BARNES, CE ^{[1
]}

ANDERSON, RE ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87185

来源：

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：720 / 720

页数：1

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