TRAPPING LEVEL MEASUREMENTS OF IMPLANTED AND ANNEALED SI P-N-JUNCTIONS

被引：0
|
作者：
BARNES, CE [1 ]
ANDERSON, RE [1 ]
机构：
[1] SANDIA LABS,ALBUQUERQUE,NM 87185
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 05期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：720 / 720
页数：1
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