TRAPPING LEVEL MEASUREMENTS OF IMPLANTED AND ANNEALED SI P-N-JUNCTIONS

被引：0

作者：

BARNES, CE ^{[1
]}

ANDERSON, RE ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87185

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：720 / 720

页数：1

共 50 条

[1] DEFECTS IN ARSENIC-IMPLANTED P-N-JUNCTIONS
BOGARDUS, EH
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APPLIED PHYSICS LETTERS, 1973, 23 (10) : 553 - 555
[2] FUNCTIONAL-PROPERTIES OF MICROSTRIP SI DETECTOR STRUCTURES WITH IMPLANTED P-N-JUNCTIONS
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[3] CRYSTAL DAMAGE AND PROPERTIES OF IMPLANTED P-N-JUNCTIONS IN SILICON
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[4] PROPERTIES OF BE-IMPLANTED PLANAR GAAS P-N-JUNCTIONS
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[5] FULLY ION-IMPLANTED P-N-JUNCTIONS IN INP
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[6] WALKOUT IN P-N-JUNCTIONS INCLUDING CHARGE TRAPPING SATURATION
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[7] SOME PROPERTIES OF ION-IMPLANTED P-N-JUNCTIONS IN SILICON
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[8] SWITCHING BEHAVIOR OF SI P-N-JUNCTIONS DOPED WITH IRON
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[9] INTERPRETATION OF CAPACITANCE VS VOLTAGE MEASUREMENTS OF P-N-JUNCTIONS
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[10] DEEP LEVEL CENTERS IN ORDINARY SILICON P-N-JUNCTIONS
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