TRANSIENT PHENOMENA IN ION SENSITIVE FIELD-EFFECT TRANSISTORS

被引：17
|
作者：
SMITH, RL [1 ]
JANATA, J [1 ]
HUBER, RJ [1 ]
机构：
[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 07期
关键词：
D O I：
10.1149/1.2129960
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1599 / 1603
页数：5
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