FABRICATION OF ION-SENSITIVE FIELD-EFFECT TRANSISTORS USING A SILICON-ON-SAPPHIRE

被引：0
|
作者：
AKIYAMA, T
KOMIYA, K
OKABE, Y
SUGANO, T
NIKI, E
机构：
[1] UNIV TOKYO,FAC ENGN,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPAN
[2] UNIV TOKYO,FAC ENGN,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
来源：
BUNSEKI KAGAKU | 1981年 / 30卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
引用
收藏
页码：754 / 756
页数：3
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