THE ROLE OF ALUMINUM IN SELECTIVE REACTIVE ION ETCHING OF GAAS ON ALGAAS

被引：24
|
作者：
SEAWARD, KL [1 ]
MOLL, NJ [1 ]
STICKLE, WF [1 ]
机构：
[1] PERKIN ELMER PHYS ELECTR LABS,MT VIEW,CA 94043
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期
关键词：
D O I：
10.1116/1.584423
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1645 / 1649
页数：5
相关论文
共 50 条
  • [41] Chamber conditioning process development for improved inductively coupled plasma reactive ion etching of GaAs/AlGaAs materials
    Connors, Michael K.
    Plant, Jason J.
    Ray, Kevin G.
    Turner, George W.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (02):
  • [42] SELECTIVE PHOTOCHEMICAL DRY ETCHING OF GAAS/ALGAAS AND INGAAS/INALAS HETEROSTRUCTURES
    KOSUGI, M
    KURODA, S
    HARADA, N
    KATAKAMI, T
    ELECTRONICS LETTERS, 1991, 27 (23) : 2113 - 2115
  • [43] GAAS TAPER ETCHING BY MIXTURE GAS REACTIVE ION ETCHING SYSTEM
    HIRANO, M
    ASAI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12B): : L2136 - L2138
  • [44] SELECTIVE REACTIVE ION ETCHING FOR SHORT-GATE-LENGTH GAAS/ALGAAS/INGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS
    KETTERSON, AA
    ANDIDEH, E
    ADESIDA, I
    BROCK, TL
    BAILLARGEON, J
    LASKAR, J
    CHENG, KY
    KOLODZEY, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1493 - 1496
  • [45] SURFACE DAMAGE ON GAAS INDUCED BY REACTIVE ION ETCHING AND SPUTTER ETCHING
    PANG, SW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 784 - 787
  • [46] INFLUENCE OF CH4/H-2 REACTIVE ION ETCHING ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS/GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES
    VANES, CM
    EIJKEMANS, TJ
    WOLTER, JH
    PEREIRA, R
    VANHOVE, M
    VANROSSUM, M
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 307 - 312
  • [47] TRANSPORT AND OPTICAL-PROPERTIES OF ALGAAS/GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES SUBJECTED TO CH4/H2 REACTIVE ION ETCHING
    VANES, CM
    EIJKEMANS, TJ
    WOLTER, JH
    PEREIRA, R
    VANHOVE, M
    VANROSSUM, M
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) : 6242 - 6246
  • [48] INFLUENCE OF CH4/H-2 REACTIVE ION ETCHING ON ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS/GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES
    VANES, CM
    EIJKEMANS, TJ
    WOLTER, JH
    PEREIRA, R
    VANHOVE, M
    VANROSSUM, M
    MATERIALS SCIENCE AND TECHNOLOGY, 1995, 11 (01) : 41 - 45
  • [49] PREFERENTIAL LATERAL CHEMICAL ETCHING IN REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS
    SCHAIBLE, PM
    SCHWARTZ, GC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 377 - 380
  • [50] ALUMINUM COMPOSITION DEPENDENCE OF REACTIVE ION ETCHING OF ALGAAS WITH CCL2F2-O-2
    PEARTON, SJ
    HOBSON, WS
    CHAKRABARTI, UK
    EMERSON, AB
    LANE, E
    JONES, KS
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) : 2137 - 2147
12345