SELECTIVE REACTIVE ION ETCHING FOR SHORT-GATE-LENGTH GAAS/ALGAAS/INGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：26
|
作者：
KETTERSON, AA
ANDIDEH, E
ADESIDA, I
BROCK, TL
BAILLARGEON, J
LASKAR, J
CHENG, KY
KOLODZEY, J
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词：
D O I：
10.1116/1.584519
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1493 / 1496
页数：4
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