DOPING PROPERTIES OF GE ON GAAS (100) GROWN BY MBE

被引：30
|
作者：
KAWANAKA, M
SONE, J
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90433-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：421 / 424
页数：4
相关论文
共 50 条
  • [21] Interface properties of MBE grown epitaxial oxides on GaAs
    Contreras-Guerrero, R.
    Edirisooriya, M.
    Noriega, O. C.
    Droopad, R.
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 238 - 242
  • [22] DOPANT INCORPORATION IN EPITAXIAL GERMANIUM GROWN ON GE(100) SUBSTRATES BY MBE
    KESAN, VP
    IYER, SS
    COTTE, JM
    JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 847 - 855
  • [23] ANISOTROPY IN THE DOPING CHARACTERISTICS OF DIMETHYLCADMIUM IN GAAS GROWN BY MOVPE ON (100) GAAS
    MATSUMOTO, K
    HIDAKA, J
    UCHIDA, K
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 329 - 332
  • [24] In doping on MBE grown HgCdTe
    Wu, Y
    Chen, L
    Wang, SL
    Yu, MF
    Qiao, YM
    Li, H
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 286 - 289
  • [25] GaAs (111) epilayers grown by MBE on Ge (111): Twin reduction and polarity
    Pelati, D.
    Patriarche, G.
    Mauguin, O.
    Largeau, L.
    Travers, L.
    Brisset, F.
    Glas, F.
    Oehler, F.
    JOURNAL OF CRYSTAL GROWTH, 2019, 519 : 84 - 90
  • [26] Silicon doping into MBE-grown GaAs at high arsenic vapor pressures
    Miyagawa, A
    Yamamoto, T
    Ohnishi, Y
    Nelson, JT
    Ohachi, T
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) : 1434 - 1439
  • [27] Analysis of Be doping influence on strained GaAsP layer grown on GaAs substrate by MBE
    Jiao Gang-Chenga
    She Feng
    Guo Hui
    Hu Cang-Lu
    Zhang Lian-Dong
    Mia Zhuang
    Cheng Hong-Chang
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2014, 8 (11-12): : 1104 - 1106
  • [28] Analysis of Be doping influence on strained GaAsP layer grown on GaAs substrate by MBE
    Jiao, Gang-Cheng, 1600, National Institute of Optoelectronics (08): : 11 - 12
  • [29] Be- doping assessment in Self-Catalyzed MBE Grown GaAs Nanowires
    Ramaswamy, Priyanka
    Pokharel, Rabin
    Parakh, Mehul
    Jones, Keith
    Li, Jia
    Iyer, Shanthi
    2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2021,
  • [30] ACCOMMODATION OF LARGE LATTICE MISMATCH OF GaP ON GaAs(100) AND GaAs ON GaP(100) LAYERS GROWN BY MBE.
    Nomura, Takashi
    Maeda, Yuuji
    Miyao, Masahiro
    Hagino, Minoru
    Ishikawa, Kenji
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (06): : 908 - 911
12345