ACCOMMODATION OF LARGE LATTICE MISMATCH OF GaP ON GaAs(100) AND GaAs ON GaP(100) LAYERS GROWN BY MBE.

被引：0
|
作者：
Nomura, Takashi [1 ]
Maeda, Yuuji [1 ]
Miyao, Masahiro [1 ]
Hagino, Minoru [1 ]
Ishikawa, Kenji [1 ]
机构：
[1] Shizuoka Univ, Hamamatsu, Jpn, Shizuoka Univ, Hamamatsu, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：908 / 911
相关论文
共 50 条
  • [1] ACCOMMODATION OF LARGE LATTICE MISMATCH OF GAP ON GAAS(100) AND GAAS ON GAP(100) LAYERS GROWN BY MBE
    NOMURA, T
    MAEDA, Y
    MIYAO, M
    HAGINO, M
    ISHIKAWA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (06): : 908 - 911
  • [2] LATTICE LOCATION OF ER IN GAAS AND AL0.5GA0.5AS LAYERS GROWN BY MBE ON (100) GAAS SUBSTRATES
    ALVES, E
    DASILVA, MF
    EVANS, KR
    JONES, CR
    MELO, AA
    SOARES, JC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 180 - 183
  • [3] LATTICE-RELAXATION IN LARGE MISMATCH SYSTEMS OF (111)CDTE/(100)GAAS AND (133)CDTE/(211)GAAS LAYERS
    SHIGENAKA, K
    SUGIURA, L
    NAKATA, F
    HIRAHARA, K
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 376 - 381
  • [4] STRUCTURE OF THE (100)GAAS ON GAP INTERFACE
    GERTHSEN, D
    PONCE, FA
    ANDERSON, GB
    CHUNG, HF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1310 - 1314
  • [5] EFFECTS OF LATTICE MISMATCH ON CRYSTALLOGRAPHIC PROPERTIES OF ZNS GROWN ON GAP AND GAAS BY MOCVD
    MITSUISHI, I
    MITSUHASHI, H
    KUKIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01): : L15 - L17
  • [6] DOPING PROPERTIES OF GE ON GAAS (100) GROWN BY MBE
    KAWANAKA, M
    SONE, J
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 421 - 424
  • [7] TEM OBSERVATION OF GAAS ON SI(100) GROWN BY MBE
    ZHOU, JM
    CHEN, H
    LI, FH
    LIU, S
    MEI, XB
    HUANG, Y
    VACUUM, 1992, 43 (11) : 1055 - 1057
  • [8] ELECTRICAL PROPERTIES OF OVAL DEFECTS IN GaAs GROWN BY MBE.
    Shinohara, Masanori
    Ito, Tomonori
    Wada, Kazumi
    Imamura, Yoshihiro
    1600, (23):
  • [9] OUTDIFFUSION OF Mn INTO GaAs FILMS GROWN ON SEMI-INSULATING GaAs SUBSTRATES BY MBE.
    Trung Dung, P.
    Laznicka, M.
    Physica Status Solidi (A) Applied Research, 1985, 92 (02):
  • [10] EFFECT OF LATTICE MISMATCH ON THE ELECTRON MOBILITIES OF INAS GROWN ON GAAS BY MBE
    CHANG, CA
    SERRANO, CM
    CHANG, LL
    ESAKI, L
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02): : 603 - 605
12345