共 50 条
- [1] ELECTRICAL-PROPERTIES OF OVAL DEFECTS IN GAAS GROWN BY MBE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L371 - L373
- [4] Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs 1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 138 - 141
- [6] GROTESQUES OF OVAL DEFECTS ON THE MBE-GROWN GaAs LAYERS. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (05): : 774 - 775
- [7] THE GROTESQUES OF OVAL DEFECTS ON THE MBE-GROWN GAAS-LAYERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (05): : 774 - 775
- [8] OVAL DEFECTS IN MBE-GROWN SUBMICRON LAYERS OF GAAS AND ALGAAS FIZIKA TVERDOGO TELA, 1991, 33 (09): : 2744 - 2748
- [9] Interface defects and their effect on the electrical properties of ZnSe/GaAs heterojunctions grown by MBE Materials Science Forum, 1997, 258-263 (pt 3): : 1383 - 1388
- [10] Interface defects and their effect on the electrical properties of ZnSe/GaAs heterojunctions grown by MBE DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 1383 - 1388