GROTESQUES OF OVAL DEFECTS ON THE MBE-GROWN GaAs LAYERS.

被引：0

作者：

Chou, Y.C. ^{[1
]}

Lee, C.T. ^{[1
]}

机构：

[1] Chung Shan Inst of Science &, Technology, Taiwan, Chung Shan Inst of Science & Technology, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 05期

关键词：

MOLECULAR BEAM EPITAXY - Applications - SEMICONDUCTING FILMS - Growth;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In addition to the regular oval defect, two grotesque features, named pyramidal and ellipsoidal shaped defects, have been observed on MBE-grown GaAs layers. Those grotesque defects were demonstrated to have come from a foreign contamination of the Ga source. A method for reducing those defects is also proposed.

引用

页码：774 / 775

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