SOME INVESTIGATIONS ON OVAL DEFECTS IN MBE-GROWN GAAS

被引：11
|
作者：
MEHTA, SK
MURALIDHARAN, R
SHARDA, GD
JAIN, RK
机构：
[1] Solid State Phys. Lab., Delhi
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 05期
关键词：
D O I：
10.1088/0268-1242/7/5/003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper the results of studies on the morphological features and chemical composition of the prominent types of oval defects present on GaAs and GaAlAs epitaxial layers grown by molecular beam epitaxy (MBE) are reported. Based on these studies, a possible mechanism for the formation of cored oval defects is proposed. The influence of this defect on the performance of MODFETS is also discussed.
引用
收藏
页码：635 / 640
页数：6
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