FACTORS CONTROLLING THE ETCHING RATE AND ETCHING PROFILE IN THE O-2 REACTIVE ION ETCHING PATTERN TRANSFER STEP IN MULTILEVEL LITHOGRAPHY

被引：6
|
作者：
JURGENSEN, CW
SHAQFEH, ESG
机构：
来源：
POLYMER ENGINEERING AND SCIENCE | 1989年 / 29卷 / 13期
关键词：
D O I：
10.1002/pen.760291310
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
引用
收藏
页码：878 / 881
页数：4
相关论文
共 50 条
  • [21] DAMAGE TO SI SUBSTRATES DURING SIO2 ETCHING - A COMPARISON OF REACTIVE ION ETCHING AND MAGNETRON-ENHANCED REACTIVE ION ETCHING
    GU, T
    DITIZIO, RA
    FONASH, SJ
    AWADELKARIM, OO
    RUZYLLO, J
    COLLINS, RW
    LEARY, HJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 567 - 573
  • [22] INFLUENCE OF THE FLOW, ETCHING TIME AND REACTOR CLEANING METHOD ON THE ETCHING RATE AND SELECTIVITY OF REACTIVE ION ETCHING OF SIO2 PHOTORESIST SYSTEM
    NOVOTNY, Z
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1991, 41 (02) : 191 - 198
  • [23] Reactive ion etching of RuO2 films: The role of additive gases in O-2 discharge
    Pan, W
    Desu, SB
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 161 (01): : 201 - 215
  • [24] Reactive ion etching lag on high rate oxide etching using high density plasma
    Akimoto, T
    Nanbu, H
    Ikawa, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2390 - 2393
  • [25] RADIAL ETCH RATE NONUNIFORMITY IN REACTIVE ION ETCHING
    NAGY, AG
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : 1871 - 1875
  • [26] HIGH-RATE REACTIVE ION ETCHING TECHNOLOGY
    OKANO, H
    YAMAZAKI, T
    HORIIKE, Y
    TOSHIBA REVIEW, 1983, (143): : 31 - 35
  • [27] Effect of N2 addition on aluminum alloy etching by electron cyclotron resonance reactive ion etching and magnetically enhanced reactive ion etching
    Kusumi, Yoshihiro
    Fujiwara, Nobuo
    Matsumoto, Junko
    Yoneda, Masahiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (4 B): : 2147 - 2151
  • [28] Use of polymethylmethacrylate for pattern transfer by ion beam etching: Improvement of etching homogeneity and patterning quality
    Koval, Y
    Borzenko, T
    Dubonos, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (05): : 2217 - 2219
  • [29] Study on controlling the profile of holographic ion beam etching gratings
    Liu Quan
    Wang Hai-bin
    Wu Jian-hong
    Sun Peng
    Qian Guo-lin
    Wang Dan
    5TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: DESIGN, MANUFACTURING, AND TESTING OF MICRO- AND NANO-OPTICAL DEVICES AND SYSTEMS, 2010, 7657
  • [30] REACTIVE ION ETCHING CHARACTERIZATION OF A-SIC-H IN CF4/O-2 PLASMA
    SAGGIO, G
    VERONA, E
    DIROSA, P
    LAMONICA, S
    SALOTTI, R
    SCHIRONE, L
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 176 - 180
12345